1.5v drive pch +sbd mosfet TT8U2 ? structure ? dimensions (unit : mm) silicon p-channel mosfet / schottky barrier diode ? features 1) pch mosfet and shottky barrier diode are put in tsst8 package. 2) high-speed switching and low on-resistance. 3) low voltage drive(1.5v). 4) built in low i r shottky barierr daiode. ? applications switching ? packaging specifications ? inner circuit package taping code tcr basic ordering unit (pieces) 3000 TT8U2 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 20 v gate-source voltage v gss ? 10 v continuous i d ? 2.4 a pulsed i dp ? 9.6 a continuous i s ? 0.8 a pulsed i sp ? 9.6 a channel temperature tch 150 ? c power dissipation p d 1.0 w / element *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. symbol limits unit repetitive peak reverse voltage v rm 30 v reverse voltage v r 20 v forward current i f 1.0 a forward current surge peak i fsm 3.0 a junction temperature t j 150 ? c power dissipation p d 1.0 w / element *1 60hz / 1cycle *2 mounted on a ceramic board symbol limits unit total power dissipation p d 1.25 w / total range of storage temperature tstg ? 55 to ? 150 ? c * mounted on a ceramic board parameter parameter type parameter drain current source current (body diode) *1 *2 * *1 tsst8 (1) (2) (3) (4) (8) (7) (6) (5) abbreviated symbol : u02 (1) anode (2) anode (3) source (4) gate (5) drain (6) drain (7) cathode (8) cathode ?1 body diode *2 (8) (7) (6) (5) (1) (2) (3) (4) ?1 1/5 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
TT8U2 ? electrical characteristics (ta=25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 10v, v ds =0v drain-source breakdown voltage v (br)dss ? 20 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 20v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 10v, i d = ? 1ma - 80 105 m ? i d = ? 2.4a, v gs = ? 4.5v - 105 140 m ? i d = ? 1.2a, v gs = ? 2.5v - 150 225 m ? i d = ? 1.2a, v gs = ? 1.8v - 180 360 m ? i d = ? 0.5a, v gs = ? 1.5v forward transfer admittance l y fs l 2.4 - - s v ds = ? 10a, i d = ? 2.4v input capacitance c iss - 850 - pf v ds = ? 10v output capacitance c oss - 60 - pf v gs =0v reverse transfer capacitance c rss - 50 - pf f=1mhz turn-on delay time t d(on) -9-nsv dd ? 10v,v gs = ? 4.5v rise time t r - 25 - ns i d = ? 1.2a, turn-off delay time t d(off) - 55 - ns r l 8.3 ? fall time t f - 45 - ns r g =10 ? total gate charge q g - 6.7 - nc v dd ? 10v,v gs = ? 4.5v gate-source charge q gs - 1.7 - nc i d = ? 2.4a, gate-drain charge q gd - 0.6 - nc r l 4.2 ? ,r g =10 ? *pulsed ? body diode(source-drain) (ta=25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 2.4a, v gs =0v *pulsed symbol min. typ. max. unit forward voltage drop v f - 0.48 0.52 v i f =1.0a reverse leakage i r --10 ? av r =10v parameter parameter conditions conditions conditions parameter static drain-source on-state resistance r ds (on) * * * * * * * * * 2/5 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
TT8U2 ? electrical characteristic curves (ta=25 ? c) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 v gs = - 1.5v v gs = - 4.5v v gs = - 2.5v v gs = - 1.8v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 2 4 6 8 10 0 2 4 6 8 10 v gs = - 4.5v v gs = - 2.5v v gs = - 1.8v v gs = - 1.5v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 v ds = - 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 10 100 1000 0.1 1 10 v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = - 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = - 2.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = - 1.8v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = - 1.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.1 1 10 0.1 1 10 v ds = - 10v pulsed ta= - 25 c ta=25 c ta=75 c ta=125 c fig.9 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 3/5 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
TT8U2 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 pulsed ta= - 25 c ta = 25 c ta = 75 c ta = 125 c reverse voltage : v r [v] reverse current : i r [ma] fig.1 reverse current vs. reverse voltage 0.001 0.01 0.1 1 0 100 200 300 400 500 600 pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c forward voltage : v f [mv] forward current : i f [a] fig.2 forward current vs. forward voltage 0.001 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.10 reverse drain current vs. sourse - drain voltage reverse drain current : - i s [a] source - drain voltage : - v sd [v] 0 50 100 150 200 250 0 2 4 6 8 10 ta=25 c pulsed i d = - 2.4a i d = - 1.2a fig.11 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d(on) t d(off) ta=25 c v dd = - 10v v gs = - 4.5v r g =10 pulsed fig.12 switching characteristics switching time : t [ns] drain - current : - i d [a] 0 1 2 3 4 5 0 2 4 6 8 ta=25 c v dd = - 10v i d = - 2.4a r g =10 pulsed fig.13 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 10 100 1000 10000 0.01 0.1 1 10 100 c oss c rss ta=25 c f=1mhz v gs =0v c iss gate - source voltage : - v ds [v] capacitance : c [pf] fig.14 typical capacitance vs. drain - source voltage 4/5 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
TT8U2 ? measurement circuits ? notice 1. sbd has a large reverse leak current compared to other type of diode. therefore ; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 5/5 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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